Physicists at The City College of New York have demonstrated a new way to transfer microwave signals onto light using magnetic waves inside a layered compound semiconductor. The work establishes a ...
BluGlass CEO Jim Haden said: "Coherent's decision to collaborate with BluGlass is a strong vote of confidence in our GaN epitaxy and laser capabilities, reinforcing our growing industry reputation for ...
An independently certified device achieved a steady-state efficiency of 33.5 percent and an open-circuit voltage of 2.014 V. This voltage is claimed to be among the highest reported value for this ...
SiC is capable of handling enormous voltages, but shaping the raw ingots into mirror-smooth wafers can shatters the surface with microscopic cracks that can cause microchips to fail.
At ECOC 2026 in Malaga, Spain (September 20–24, 2026) Ams Osram will unveil its latest breakthrough in Thin-Film VCSEL technology and demonstrate a connectorised multi-core fibre solution in ...
Spanish company VLC Photonics, part of the Hitachi Group, has transferred its PIC testing and assembly operations to new headquarters at the Táctica Industrial Park in Paterna, Valencia. The move ...
The UK's All-Party Parliamentary Group (APPG) for Semiconductors launched a new paper, 'Defence and National Security: Delivering a Sovereign Semiconductor Capability', in Parliament on Tuesday 15 ...
At the European Conference on Optical Communication (ECOC) this week, Swiss company Ligentec, is announcing a new generation of heterogeneous integrated Thin-Film Lithium Niobate (TFLN) and integrated ...
Aeluma, a semiconductor company specialising in non-InP technologies for AI, mobile and consumer, defense and aerospace, and quantum, has signed an agreement with Sumitomo Chemical Advanced ...
"The integration of our SiC MOSFETs into BMW’s Gen 6 of electric vehicles – better known as Neue Klasse – highlights Rohm's technological expertise in automotive power electronics," says Wolfram ...
Researchers from Peking University (PKU) have monolithically integrated 2DHG-based InGaN p-FETs with 2DEG-based GaN n-FETs, achieving robust III-nitride complementary logic (CL) building blocks for ...
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