The electrical properties of Gallium Nitride (GaN) offer several advantages over Silicon (Si) for creating switching devices for power electronics. Already this emerging technology is showing ...

Seen as a long strand with smaller threads branching, the Quipu superstructure contains 68 galaxy clusters spanning 1.4 ...

240m at 37g/t gallium trioxide, including 8m at 108g/t Ga2O3 from 144m and 20m @63g/t Ga 2 O 3 from 220m to end of hole. The gallium runs from surface to the end of hole depths of 240m, where it ...

Object Details Description An inscription this sample of gallium arsenide reads “S771 GaAs thin film on Ge / C. Sahagian, AFCRL.” Charles S. Sahagian (b.1926) is an Armenian-American who joined the ...

GALLIUM arsenide is a semiconductor of great interest from the purely scientific point of view and as a device material. It is therefore desirable to be able to prepare single crystals of high purity.

OpenGL and Cmake project that uses Orbital Mechanics to simulate planetary orbits! cmake cpp physics-simulation orbital-simulation orbital-mechanics. Updated Jun 27, 2023; C++; Improve this page Add a ...

As a promising way to reduce the temperature for conventional thermolysis, plasmon-induced photocatalysis has been utilized for the dehydrogenation of methane. Here we probe the microscopic dynamic ...

In this study, direct ink writing (DIW) of eutectic gallium-indium (EGaIn) is introduced and the important process variables (PVs) are introduced and discussed. To fabricate the soft sensor in a ...

Biofield effect transistors (bio-FETs) have emerged as promising candidates for next-generation pathogen detection platforms owing to their exceptional sensitivity and rapid response. However, they ...

Solar storms have the potential to cause catastrophic damage. One that occurred around the end of October 2003 (now called the 2003 Halloween Storm) caused an estimated $27B in damages. That ...