TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large ...

Latest generation EliteSiC M3e MOSFETs decrease turn-off losses by up to 50% for electrification applications Platform uniquely achieves a reduction in both conduction and switching losses on the ...

Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the ...

TOLT joins the previously released U2 portfolio as the second of three Wolfspeed top-side cooled package families, aimed at ...

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, targeting automotive, energy, industrial, and telecom systems. The ...

The late January release of Cree’s new CMF20120D MOSFET, which the company claims as the “first fully qualified commercial silicon carbide power MOSFET,” marks yet another announcement in a string of ...

We’ve seen how silicon carbide semiconductors offer a path of less resistance that enables higher-voltage power electronics for next-generation electric vehicles with big batteries and fast charging ...

Designed to compete with high voltage (≥ 1200V) silicon-based power devices like MOSFETs and IGBTs, silicon carbide (SiC) based semiconductor supplier Cree has launched what it claims is the ...

Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

DURHAM, N.C.--(BUSINESS WIRE)-- Cree, Inc. (Nasdaq: CREE), the global leader in silicon carbide technology through its Wolfspeed business, today announced that Shenzhen Gospower Digital Technology Co.

Latest generation silicon carbide semiconductors enable a significant increase in power conversion efficiency in solar power generation systems and associated energy storage. This white paper ...