On 12 January, Germany-based semiconductor manufacturer Infineon has signed a new multi-year-supply and cooperation agreement with Resonac Corporation (formerly Showa Denko K.K.), complementing and ...

Infineon Technologies AG has extended its CoolSiC portfolio with the introduction of M1H technology 1,200-V SiC MOSFETs with enhanced features. These devices will be available in Easy modules and ...

Munich, Germany and Durham, N.C. – January 23, 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a global semiconductor leader in power systems and IoT, and Wolfspeed, Inc. (NYSE: WOLF), a ...

Infineon continues to report strong growth while meaningfully expanding margins and heavily investing in capacity expansion. The company's strong competitive positioning in the semiconductor industry, ...

Infineon Technologies AG has started to commercially produce Schottky diodes based on silicon carbide (SiC) technology in an effort to provide a high-performance alternative to silicon and gallium ...

Infineon Technologies and Hon Hai Technology Group (Foxconn) are to establish a long-term partnership in the field of electric vehicles (EV). The Memorandum of Understanding (MoU) focuses on silicon ...

Infineon has signed a SiC wafer supply deal with SK Siltron. “For Infineon, supply chain resiliency is about implementing a multi-supplier strategy and drive decarbonisation,” said Angelique van der ...

Infineon Technologies and Stellantis have signed a non-binding Memorandum of Understanding as a first step towards a potential multi-year supply cooperation for silicon carbide (SiC) semiconductors.

Infineon Technologies and ROHM have signed an agreement to collaborate on packages for silicon carbide (SiC) power semiconductors that are used in a broad range of different applications. Dr. Peter ...

STMicroelectronics remained as the market leader of the $1.6 bln SiC market in 2022 with a 44% share (which is more than double over second-placed Infineon). However, it has lost its product ...

Infineon introduced its first chips made from silicon carbide (SiC) more than 20 years ago and has long touted the material as the future of power electronics. Now a lot more companies are perking up ...

Infineon has announced 2kV silicon carbide mosfets and diodes for use in high-power inverters with 1.5kV dc links. “Increasing demand for high power density is pushing developers to adopt 1,500V dc ...